Global Power Discrete Market Poised for Fruitful Future

As per the evaluations of a recent business publication from TMR Research, the global power discrete market is poised for a fruitful future on the back of growing emphasis on alternative energy as well as the growth of the industries pertaining to commercial aviation, medical, automotive, defense, and power solutions. The report is titled “Power Discrete Market – Global Industry Analysis, Market Size, Share, Trends, Analysis, Growth and Forecast 2017 – 2025.”

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The analyst of the report has detected that the demand for insulated-gate bipolar transistors (IGBTs) is stroking the power discrete market, which are a specific type of semiconductors that can be used as switch in power electronics. By using discrete silicon-based IGBTs, it is possible to increase the efficacy of electronic devices, ranging from consumer electronics to power electronics. As a matter of fact, the use of silicon-based IGBTs contributes significantly to the advancement of power electronics.

On the other hand, the growth of the power discrete market is challenged due to several factors. Some of these are slow economic upturn in the US, Eurozone debt crisis, and natural calamities in Japan among others.On the basis of product type, the market for power discrete can be segmented into insulated gate bipolar transistor (IGBT), power rectifiers, gallium nitride (GaN), silicon carbide (SiC), metal oxide semiconductor field effect transistor (MOSFET), and thyristors. Application-wise, the market can be bifurcated into medical, consumer electronics, automotive, lighting, and infrastructure. Some of the targeted audiences of the TMR Research report are component manufacturers, raw material suppliers, power device manufacturers and distributors, and end use verticals. Geographically, all demand potential of all important regions and countries have been formulated.

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ST Microelectronics N.V., Toshiba Corp., Technologies AG, International Rectifier, Mitsubishi Electric Corp., Fairchild Semiconductor International Inc., Renesas Electronics Corp, Tongfang Guoxin Electronics, and ON Semiconductor Corp are some of the notable companies operating in this market.

Power Discrete Market : Key Trends and Forecast Research Report 2017 – 2025

Global Power Discrete Market: Snapshot

The prosperity of power discrete market is a reflection of its extending application in alternative energy, commercial aviation, communication, defense, medical, automotive, and power solutions. With escalating energy needs across the world, the power grid infrastructure is getting modernized in order to generate more power, transmit and distribute it efficiently, and monitor the consumption as per the requirements of the end-user, and thereby propelling the demand in the global power discrete market. In the commercial aviation sector, technologically advanced power discrete are gaining popularity to meet the ever-increasing electronic content in new generation aircrafts.

In the security and defense sector, the reliability and flexibility offered by power discrete is highly useful for radar and other electronic warfare, guidance and control systems, autonomous weapons, and secure communication. The medical sector has also emerged as a potential end-use industry for the vendors in the global power discrete market, finding application for implantable RF and ingestible devices, monitoring and diagnostic equipment, wireless telemetry, magnetic resonance imaging (MRI) equipment, wearable wireless radio frequency (RF) monitoring devices. Power discrete makes for highly reliable and high performance products, and help in improving patient care and quality of life.

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The automotive sector contributes to nearly 45% of the world’s energy consumption. As a result, it is paramount to increase the performance of each component in an automobile and power discrete systems offer flexible opportunities to make hybrid motor control devices and meet the escalating demand.

Global Power Discrete Market: Overview

The increasing demand for insulated-gate bipolar transistor (IGBT) is contributing significantly to the growth of the power discrete market. Power discrete devices are a type of semiconductor devices that are utilized as a switch in power electronics. For instance, a switch-mode power supply is an example of power discrete device.

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The report presents valuable insights into the growth trends of the global power discrete market for the 2017-2025 period. This includes a scrutiny into vital market indicators such as market drivers, market challenges, and trends in the historic years and their behavior analyzed for the future years.

The report is presented collecting data from industry-centric databases and using validated analytical tools for scrutiny of the information. Last but not the least, the report is an all-important tool for comprehending trends, opportunities, and competitive hierarchy of the global power discrete market for the 2017-2025 period.

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Global Power Discrete Market: Material Requirements

Power discrete devices utilize next-generation materials such as SiC and GaN. This is because these materials offer speed switching, low energy loss, and great heat resistance. Power semiconductors use silicon carbide (SiC) for expansion, which includes SiC, SiC BJTs, SiC JFETs diodes, MOSFETs, and SiC Schottky. The band gap material that provides comparable benefits as SiC has better cost-reduction potential. In addition, gallium nitride (GaN) can be used by existing silicon substrates. The use of GaN helps reduce cost and facilitates mass production. The approval of SiC and GaN power semiconductors are anticipated to increase, mainly in the industrial motor drive and electric vehicle/hybrid electric vehicle segments.

Global Power Discrete Market: Drivers and Restraints

The incessantly increasing demand for Insulated Gate Bipolar Transistors (IGBTs) is one of the major factors driving the global power discrete market. The use of discrete silicon-based IGBTs increases the efficacy of electronic devices that range from consumer electronics to power electronics. As a matter of fact, the use of silicon-based IGBTs contributes significantly to the advancement of power electronics.

However, the growth of the power discrete market is challenged due to several factors. Some of these are slow economic upturn in the US, Eurozone debt crisis, and natural calamities in Japan among others.

Global Power Discrete Market: Market Segmentation 

The global power discrete market is segmented on the basis of type and application. By type, Insulated Gate Bipolar Transistor (IGBT), Gallium Nitride (GaN), power rectifiers, Metal Oxide Semiconductor Field Effect Transistor (MOSFET), Silicon Carbide (SiC), and thyristors are the components of this market. On the basis of application, the power discrete market is divided into automotive, consumer, medical, cellular handsets and infrastructure, and lighting among others.

Companies Mentioned in the Report 

The report presents the competitive scenario of the global power discrete market profiling key companies in the market, namely Infineon Technologies AG, Mitsubishi Electric Corp., ST Microelectronics N.V., International Rectifier, Vishay Intertechnology Inc., Siward Crystal Technology, Vectron International, Fairchild Semiconductor International Inc., Toshiba Corp., Fuji Electric Co Ltd, Renesas Electronics Corp, ON Semiconductor Corp, and Tongfang Guoxin Electronics among others.

Application in Multiple Domains Boosts Demand for Power Discreet Devices

San Francisco, California, June 02, 2017: The power discrete market is expected to advance at a quick pace, by virtue of widespread application in multiple domains including defense, alternative energy, communication, power solutions, commercial aviation, medical and automotive sectors. With the insatiable demand for energy across the globe, several countries are ramping up their power grid infrastructures. Modern-day power grids are thus designed to produce, transmit, and distribute more power, apart from monitoring the power consumption of every end user. As a result, the global power discrete market is likely to bear fruitful opportunities.

A power discrete device is a kind of semiconductor device used as a switch in power electronics. For example, a switch-mode power supply is a type of power discrete device that consists of a switching regulator for converting electrical power efficiently. It is designed so as to cut down on DC voltage. The growth of the global power discrete market is also ensured by the escalating need for insulated-gate bipolar transistor (IGBT) devices. With a number of end users opting for discrete silicone-based insulated-gate bipolar transistors, the further growth of power electronics is inevitable.

On the contrary, the global market for power discrete devices can face key bottlenecks due to factors such as Eurozone debt crisis, slow economic growth in the U.S., and the occurrence of natural calamities in countries such as Japan. However, the global market for power discrete can overcome these hurdles by tapping the vast ocean of opportunities located in developing countries.

The global power discrete market can be segmented by application and type of device. By type of device, the global market for power discrete devices can be segmented into metal oxide semiconductor field effect transistor (MOSFET), insulated-gate bipolar transistor (IGBT), silicon carbide (SiC), thyristors, and gallium nitride (GaN). Based on application, the global market for power discrete devices can be categorized into medical, automotive, lighting, cellular handsets, consumer, and infrastructure.

By geography, the global power discrete market can be segmented into Asia-Pacific, the Middle-East and Africa, Latin America, Europe and North America. Ripe opportunities await the market players in Asia-Pacific. The demand is being driven by a prosperous automotive industry that commands a massive portion of the overall energy consumption. North America and Europe are likely to represent major chunks of global power discrete market over the forthcoming period.

Infineon Technologies, Fuji Electric Co. Ltd., Siward Crystal Technology, Tongfang Guoxin Electronics, Fairchild Semiconductor International Inc., Vishay Intertechnology Inc., and Toshiba Corp. are some prominent market players operating in the global market for power discrete systems.