Ferroelectric RAM Market to Benefit from Rising Usage in Smart Meters

San Francisco, California, September 14, 2017: A recent market research report by TMR Research presents a comprehensive overview of the present state of the global market for ferroelectric RAM. The report, titled “Ferroelectric RAM Market – Global Industry Analysis, Size, Share, Trends, Analysis, Growth, and Forecast 2017 – 2025,” states that although the technology has not proliferated in many applications as it is in a nascent stage of development, the market is expected to gain traction in the next few years. The rising use of ferroelectric RAM in smart meters is expected to be one of the key trends to drive the market in the next few years.

Smart meter manufacturers are expected to show interest in ferroelectric RAM technology owing to its benefits such as low consumption of power and its capability of enhancing the lifespan and efficiency of their products. The high write speed offered by the ferroelectric RAM technology is also expected to encourage smart meter vendors to include it in their products. Other applications of the technology such as use for automatic system update in wireless systems are also expected to drive the market.

The report states that the rising concerns regarding energy conservation is one of the key factors positively influencing the development of energy efficient devices. Ferroelectric RAM being one technology that offers operations similar to flash memory, while utilizing lower power in comparison, its uptake would witness an upward rise from manufacturers of electronic devices with a high quotient of energy efficiency. The vast rise in research and development activities surrounding ferroelectric RAM is expected to result in a vast rise in the applicability of the technology in the next few years.

From a geographical standpoint, the report covers the market for ferroelectric RAM across regions such as Asia Pacific, North America, Europe, and Middle East and Africa. Of these, the market in North America is presently the leading consumer of ferroelectric RAM and is expected to remain one of the leading contributors of revenue to the global market in the next few years. Increased adoption of smart meters in the region along with the high rate of digitization across key industries will allow the region to remain at the forefront in terms of development of the ferroelectric RAM market.

The report also provides a thorough analytical overview of the vendor landscape of the global ferroelectric RAM market. The report states that the market will have a low number of leading players in the next few years. However, the level of competition could be intense owing to the vast benefits of the technology as compared to conventional non-volatile memories in the market. Companies in the market could benefit from the inclusion of high potency products in their portfolios as 64-Kbit ferroelectric RAMs have been finding increased usage in car navigation systems, healthcare equipment, and other products that require recurrent collection of log data. The leading companies in the market are Toshiba Corp., Texas Instruments, Infineon Technologies AG, Ramtron International Corporation, Fujitsu Ltd., and LAPIS Semiconductor Co. Ltd.

The report also provides a detailed assessment of the key areas offering high potential of growth and an overview of the developments observed in the market in the recent years. The report presents an analysis of the facets that could influence the market, both positively and negatively, over the report’s forecast period. Insights into recent changes in the vendor landscape on account of mergers, acquisitions, collaborations, introduction of new products, and entry of new players have also been included in the report.

Click on the link below to request a sample copy of the report

https://www.tmrresearch.com/sample/sample?flag=B&rep_id=419