Ferroelectric RAM is generally known as FRAM that combines the characteristics of RAM and ROM with flash memory. It enables access to the write and reading access to retain data and even after power loss. Against RAM, the FRAM allows the ferroelectric layer to fulfill the purpose of fabricating the dielectric layer. It also requires power during reading and writing but doesn’t require power in the idle state. Thanks to the advancement in the product is propelling adoption of the ferroelectric RAM. Rising need for smart meters is expected to be the key trend in the market that is influencing the growth of the ferroelectric RAM market.
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Growing anxieties over energy conservation and growing demand for enhanced and efficient devices are boosting adoption of the FRAM. The application of FRAM is widening across wireless devices and battery powered sensors for its high power efficiency. The aforementioned factors are boosting the growth of the global ferroelectric RAM market. In addition, FRAM offers high performance for writing. However, high efforts required for sales that are hampering on the growth of the ferroelectric RAM market. Being comparatively new product, there is low availability of the FRAM is hampering the growth of the global ferroelectric RAM market. There are very few numbers of the leading players in the industry that are facing intense competition. In addition, a growing number of new players in the market are intensifying the competition and again hampering the growth of the ferroelectric RAM market.
Regionally, North America dominated the global ferroelectric RAM market and is expected to remain dominant over the next few years.
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Some of the key players in the ferroelectrics RAM market include Toshiba Corp., Infineon Technologies AG, LAPIS Semiconductor Co. Ltd., Fujitsu Ltd., Ramtron International Corporation, and Texas Instruments. These players are increasingly investing in the ferroelectric RAM market for enhancing products.